By Peter W. Hawkes (Ed.)
Advances in Imaging & Electron Physics merges long-running serials--Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy . The sequence beneficial properties prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, photo technological know-how and electronic picture processing, electromagnetic wave propagation, electron microscopy, and the computing equipment utilized in these kind of domain names.
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Additional info for Advances in Imaging and Electron Physics, Vol. 107
22 may be considered to show the time dependent growth of scarring, subsequent to the initial injection of electrons into the dot. From this perspective, the important feature to note is that, while the direct transit time across the dot is no more than a few picoseconds, a well-defined scar is only built up once electrons have been coherently trapped for at least a hundred times longer than this! The implication is, therefore, that temperature dependent transport studies may be used to probe the temporal evolution of the scars.
6-pm dot by sweeping dc bias at zero magnetic field. , 1997a1. , 1998a). We do note from this figure, however, that the value of the phase-breaking time in this high resistance regime shows considerable variations from one dot to another, which do not appear to follow any well-defined scaling with dot size. The influence of environmental coupling on the behavior of mesoscopic devices has been widely considered in the literature. For the open dots of interest here, we expect that the phase-breaking rate should be proportional to the number of available states that electrons may access during transport.
After subtracting the quantized background from the total resistance variation, we thus obtain a series of highly regular conductance oscillations, reminiscent of those seen in the magneto-transport studies (Fig. , 1998b). These oscillations, too, are found to be a generic feature of these devices, and suggest that the selective nature to electron transport inferred previously is indeed an intrinsic property of these devices. As for the origin of the gate-voltage induced oscillations, these are thought to arise from an associated modulation of the size of the dot.
Advances in Imaging and Electron Physics, Vol. 107 by Peter W. Hawkes (Ed.)